MCH5836 no. a0780-1/6 tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : ena0780 MCH5836 mosfet : p-channel silicon mosfet sbd : schottky barrier diode general-purpose switching device applications sanyo semiconductors d ata sheet features composite type with an p-channel silicon mosfet (mch3307) and a schottky barrier diode (ss10015m) contained in one package facilitating high-density mounting. [mosfet] low on-resistance. 1.8v drive. [sbd] short reverse recovery time. low forward voltage. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit [mosfet] drain-to-source voltage v dss -- 20 v gate-to-source voltage v gss 10 v drain current (dc) i d -- 1 a drain current (pulse) i dp pw 10 s, duty cycle 1% -- 4a allowable power dissipation p d mounted on a ceramic board (900mm 2 ? 0.8mm) 1unit 0.8 w channel temperature tch 150 c storage temperature tstg - -55 to +125 c marking : ya continued on next page. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, av equipment, communication device, office equipment, industrial equipment etc.). the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 41807pe ti im tc-00000614
MCH5836 no. a0780-2/6 continued from preceding page. parameter symbol conditions ratings unit [sbd] repetitive peak reverse voltage v rrm 15 v nonrepetitive peak reverse surge voltage v rsm 15 v a verage output current i o 1a surge forward current i fsm 50hz sine wave, 1 cycle 3 a junction temperature tj - -55 to +125 c storage temperature tstg - -55 to +125 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit [mosfet] drain-to-source breakdown voltage v (br)dss i d = -- 1ma, v gs =0v -- 20 v zero-gate voltage drain current i dss v ds = -- 20v, v gs =0v -- 1 a gate-to-source leakage current i gss v gs = 8v, v ds =0v 10 a cutoff voltage v gs (off) v ds = -- 10v, i d = -- 100 a -- 0.4 -- 1.4 v forward transfer admittance ? yfs ? v ds = -- 10v, i d = -- 500ma 0.72 1.2 s r ds (on)1 i d = -- 500ma, v gs = -- 4v 380 500 m ? static drain-to-source on-state resistance r ds (on)2 i d = -- 300ma, v gs = -- 2.5v 540 760 m ? r ds (on)3 i d = -- 100ma, v gs = -- 1.8v 670 1000 m ? input capacitance ciss v ds = -- 10v, f=1mhz 115 pf output capacitance coss v ds = -- 10v, f=1mhz 23 pf reverse transfer capacitance crss v ds = -- 10v, f=1mhz 15 pf t urn-on delay time t d (on) see specified test circuit. 8 ns rise time t r see specified test circuit. 6 ns t urn-off delay time t d (off) see specified test circuit. 15 ns fall time t f see specified test circuit. 7 ns t otal gate charge qg v ds = -- 10v, v gs = -- 4v, i d = -- 1a 1.5 nc gate-to-source charge qgs v ds = -- 10v, v gs = -- 4v, i d = -- 1a 0.4 nc gate-to-drain ?iller?charge qgd v ds = -- 10v, v gs = -- 4v, i d = -- 1a 0.3 nc diode forward voltage v sd i s = -- 1a, v gs =0v -- 0.89 -- 1.2 v [sbd] reverse voltage v r i r =0.5ma 15 v forward voltage v f 1i f =0.3a 0.3 0.33 v v f 2i f =0.5a 0.33 0.36 v reverse current i r v r =6v 90 a interterminal capacitance c v r =10v, f=1mhz 20 pf reverse recovery time t rr i f =i r =100ma, see specified test circuit. 10 ns package dimensions electrical connection unit : mm (typ) 7021a-008 54 13 2 1 : gate 2 : source 3 : anode 4 : cathode 5 : drain top view 1 : gate 2 : source 3 : anode 4 : cathode 5 : drain sanyo : mcph5 2.0 0.25 1.6 2.1 0.25 0.85 0.3 0.65 0.15 0 to 0.02 0.07 54 123 54 123
MCH5836 no. a0780-3/6 pw=10 s d.c. 1% p. g 50 ? g s d i d = --500ma r l =20 ? v dd = --10v v out MCH5836 v in 0v - -4v v in duty 10% 50 ? 100 ? 10 ? - -5v t rr 100ma 100ma 10ma 10 s switching time test circuit t rr test circuit [mosfet] [sbd] -- 0 . 2 -- 0 . 4 -- 0 . 6 -- 0 . 8 -- 1 . 0 -- 1 . 4 -- 1 . 2 -- 2 . 0 -- 1 . 8 -- 1 . 6 it12362 0 0 -- 0 . 3 -- 0 . 2 -- 0 . 1 -- 0 . 5 -- 0 . 4 -- 1 . 0 -- 0 . 9 -- 0 . 1 -- 0 . 8 -- 0 . 7 -- 0 . 6 0 -- 0 . 2 -- 0 .3 --0.4 --1.0 -- 0 . 5 -- 0 .6 --0.7 --0.8 --0.9 it03501 0- -0.5 --1.0 --1.5 --2.0 --2.5 --3.0 it03502 it12363 v gs = --1.5v --4.0v --2.0v --2.5v --3.0v v ds = --10v 25 c - -25 c 75 c t a=75 c ta= - -25 c r ds (on) -- v gs i d -- v ds i d -- v gs r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- m ? static drain-to-source on-state resistance, r ds (on) -- m ? gate-to-source voltage, v gs -- v drain-to-source voltage, v ds -- v drain current, i d -- a gate-to-source voltage, v gs -- v drain current, i d -- a ambient temperature, ta -- c 25 c 0--2--4- -6 --8 100 200 300 400 500 700 600 1000 900 800 0 i d = --0.5a - -0.1a t a=25 c - -0.3a -- 6 0 -- 4 0 -- 2 0 0 2 0 4 06080100 120 140 160 100 200 300 400 700 600 500 1000 900 800 0 i d = --0.5a, v gs = --4.0v i d = --0.3a, v gs = --2.5v i d = --0.1a, v gs = --1.8v
MCH5836 no. a0780-4/6 00.20.40 .6 0.8 1.0 1.2 1.6 1.4 0 -- 0 . 5 -- 1 . 0 -- 1 . 5 -- 2 . 5 -- 2 . 0 -- 3 . 0 -- 4 . 0 -- 3 . 5 it03509 it12365 it12364 -- 0 . 1 - -1.0 23 57 23 100 10 7 5 3 2 7 5 3 2 3 2 1.0 v dd = --10v v gs = -- 4 v t d (on) t d (off) t f t r it03507 it03505 -- 0 . 01 --0.1 23 57 23 57 -- 1 . 0 3 1.0 2 0.1 7 5 3 2 it03506 -- 0 . 4 -- 0 .5 --0.6 --0.7 --0.8 --0.9 --1.1 -- 1 . 0 - -1.2 -- 0 . 01 -- 0 . 1 -- 1 . 0 -- 1 0 7 5 3 2 7 5 3 2 7 5 3 2 0--4-- 8- -12 --16 --20 -- 2 -- 6 -- 1 0 -- 1 4 -- 1 8 10 100 2 7 5 3 2 3 it03508 v ds = --10v i d = --1a v ds = --10v 75 c 25 c t a= - -25 c v gs =0v - -25 c 25 c t a=75 c ciss coss crss f=1mhz sw time -- i d ciss, coss, crss -- v ds ? y fs ? -- i d i s -- v sd drain current, i d -- a switching time, sw time -- ns drain current, i d -- a f orward transfer admittance, ? y fs ? -- s diode forward voltage, v sd -- v source current, i s -- a drain-to-source voltage, v ds -- v ciss, coss, crss -- pf v gs -- qg p d -- ta a s o t otal gate charge, qg -- nc gate-to-source voltage, v gs -- v ambient temperature, ta -- c allowable power dissipation, p d -- w drain-to-source voltage, v ds -- v drain current, i d -- a -- 0 . 1 - -1.0 -- 0 . 01 5 3 2 7 3 2 7 5 2 3 5 57 23 5 3 2 2 35 7 3 27 5 -- 1 0 -- 1 . 0 -- 0 . 1 -- 0 . 01 7 -- 1 0 i dp = --4a i d = --1a operation in this area is limited by r ds (on). pw 10 s 1ms 100 s 10ms 100ms dc operation (ta=25 c) t a=25 c single pulse mounted on a ceramic board (900mm 2 ? 0.8mm) 1unit 02040608 0 100 120 140 160 0 0.2 0.4 1.0 0.6 0.8 mounted on a ceramic board (900mm 2 ? 0.8mm) 1unit
MCH5836 no. a0780-5/6 c -- v r i r -- v r p f (av) -- i o i f -- v f forward voltage, v f -- v forward current, i f -- a reverse voltage, v r -- v reverse current, i r -- a av erage output current, i o -- a a verage forward power dissipation, p f (av) -- w reverse voltage, v r -- v interterminal capacitance, c -- pf 0 100000 100 1000 10000 10 1.0 0.1 0.01 15 510 0 0 0.2 0.4 0.6 0.8 0.7 0.6 0.4 0.3 0.2 0.1 0.5 1.0 1.2 1.5 1.4 0.1 0.3 0.5 0.7 0.9 1.1 1.3 0 0.01 0.001 0.3 0.4 0.5 0.1 0.2 0.1 10 7 5 3 2 1.0 7 5 3 2 7 5 3 2 7 5 3 2 t a=125 c 25 c - -25 c 50 c 75 c 100 c it07150 it07152 it07153 it07151 (1) (2) (4) (3) 180 360 360 rectangular wave sine wave (1)rectangular wave =60 (2)rectangular wave =120 (3)rectangular wave =180 (4)sine wave =180 t a=125 c 100 c - -25 c 75 c 50 c 25 c 2 100 10 2 3 5 7 23 57 1.0 0.1 23 57 10 2 f=1mhz i fsm -- t tim e, t -- s surge forward current, i fsm (peak) -- a 7 0.01 23 7 0.1 0 52 2 37 1.0 5 12 10 8 6 4 2 3 it00626 i s 20ms t current waveform 50hz sine wave
MCH5836 no. a0780-6/6 sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. ps note on usage : since the MCH5836 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. this catalog provides information as of april, 2007. specifications and information herein are subject to change without notice.
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